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Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

机译:激子,三元和带电的精细结构和磁光学   biexciton表示单个Inas量子点发射1.3微米

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摘要

We present a detailed investigation into the optical characteristics ofindividual InAs quantum dots (QDs) grown by metalorganic chemical vapordeposition, with low temperature emission in the telecoms window around 1300nm. Using micro-photoluminescence (PL) spectroscopy we have identified neutral,positively charged, and negatively charged exciton and biexciton states.Temperature-dependent measurements reveal dot-charging effects due todifferences in carrier diffusivity. We observe a pronounced linearly polarizedsplitting of the neutral exciton and biexciton lines (~250 ueV) resulting fromasymmetry in the QD structure. This asymmetry also causes a mixing of theexcited trion states which is manifested in the fine structure and polarizationof the charged biexciton emission; from this data we obtain values for theratio between the anisotropic and isotropic electron-hole exchange energies of(Delta1)/(Delta0)= 0.2--0.5. Magneto-PL spectroscopy has been used toinvestigate the diamagnetic response and Zeeman splitting of the variousexciton complexes. We find a significant variation in g-factor between theexciton, the positive biexciton, and the negative biexciton; this is alsoattributed to anisotropy effects and the difference in lateral extent of theelectron and hole wavefunctions.
机译:我们对通过金属有机化学气相沉积法生长的InAs量子点(QD)的光学特性进行了详细的研究,并在1300nm左右的电信窗口中发出了低温辐射。使用微光致发光(PL)光谱,我们已经确定了中性,正电荷和负电荷的激子和双激子状态。依赖于温度的测量揭示了由于载流子扩散率差异而产生的点电荷效应。我们观察到中性激子和双激子线(〜250 ueV)的明显的线性极化分裂,这是由QD结构中的不对称引起的。这种不对称性还引起激发的三态混合,这表现为带电双激子发射的精细结构和极化。从这些数据中,我们获得各向异性和各向同性的电子-空穴交换能量(Delta1)/(Delta0)= 0.2--0.5的比值。磁-PL光谱已用于研究各种激子复合物的反磁响应和塞曼分裂。我们发现在激子,正激子和负激子之间的g因子存在显着差异;这也归因于各向异性效应以及电子和空穴波函数横向范围的差异。

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